ECE 2300 - Electrical Circuits and Electronic Devices: standard syllabus | course page; ECE 2560 - Introduction to Microcontroller-Based Systems: standard syllabus | course page; ECE 2998.01 - Undergraduate Research: standard syllabus | course page; ECE 2998.02 - Undergraduate Research: standard syllabus | course page Biasing, small-signal and large signal analysis and the principles employed in the design of electronic circuits are included in the course. Balbir Kumar, Shail.B.Jain, “Electronic devices and circuits” PHI learning private limited, 2nd edition 2014. EC6202 Notes Syllabus all 5 units notes are uploaded here. Anna University Regulation 2017 EEE EC8353 EDC Syllabus for all 5 units are provided below.Download link for EEE 3RD SEM EC8353 ELECTRON DEVICES AND CIRCUITS Engineering Syllabus is listed down for students to make perfect utilization and score maximum marks with our study materials. An npn BJT having reverse saturation current Is = 10-15 A is biased in the forward active region with VBE = 700 mV. As per the syllabus guidelines available on the official website, Electronics and Communication Engineering Syllabus has eight sections: Engineering Mathematics, Networks Signals and Systems,  Electronic Devices, Analog Circuits, Digital Circuits, Control Systems, Communications and Electromagnetics. The dependence of draft velocity of electrons field in a semiconductor is shown below. 9 EC392 Solid State Devices 0 0 3 3 2 10 11 EC393 EC394 1. Check Electronic Devices and Circuits Notes for GATE and Electronics & Communication Engineering exams preparation. You can find GATE ECE subject wise and topic wise questions with answers This section of GATE Syllabus includes questions based on Verbal Ability and Numerical Ability. ... EC 2251 ELECTRONIC CIRCUITS II. Random processes: autocorrelation and power spectral density, properties of white noise, filtering of random signals through LTI systems; Analog communications: amplitude modulation and demodulation, angle modulation and demodulation, spectra of AM and FM, super heterodyne receivers, circuits for analog communications; Information theory: entropy, mutual information and channel capacity theorem. Dear Aspirants, We are providing Important Formula notes for the subject Electronic Devices and Circuits.These notes will assist the candidates to revise the important formulas from time to time and they can review them in last few hours before the examination. The measured transconductance gm of an NMOS transistor operating in the linear region is plotted against the gate voltage VG at constant drain voltage VD. The core subjects of ECE with includes Electronic Circuits, Electronic Devices, Network Analysis, Signal Processing, Digital Electronics, Analog and Digital Communication, Electromagnetic Theory. Check below links to download the ECE Books for Free. The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are. If ON denotes conducting state of the diode and OFF denotes nonconducting state of the diode, then in the circuit, If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to. The circuit is used as an amplifier with the input connected between G and S terminals and the output taken between D and S terminals. Mar 1, 2013 By Vasu Leave a Comment. Connections are made as per the circuit diagram. The course deals with the op-amp, the diode, the bipolar junction transistor, and the field-effect transistor. In a forward biased pn junction diode, the sequence of events that best describes the mechanism of current flow is, In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces, The return loss of a device is found to be 20 dB. Number systems; Combinatorial circuits: Boolean algebra, minimization of functions using Boolean identities and Karnaugh map, logic gates and their static CMOS implementations, arithmetic circuits, code converters, multiplexers, decoders and PLAs; Sequential circuits: latches and flip‐flops, counters, shift‐registers and finite state machines; Data converters: sample and hold circuits, ADCs and DACs; Semiconductor memories: ROM, SRAM, DRAM; 8-bit microprocessor (8085): architecture, programming, memory and I/O interfacing. If the minimum feature sizes that can be realized using System1 and System2 are $L_{min1}$ and $L_{min2}$ respectively, the ratio $L_{min1}/L_{min2}$ (correct to two decimal places) is__________. Embedded Syst… The maximum emitter current (in μA) is _____. Anna University Regulation 2017 ELECTRICAL AND ELECTRONICS ENGINEERING (EEE) 3RD … In the steady state, the hole concentration in the sample is approximately 10x, where x is integer. In a p+n junction diode under reverse bias, the magnitude of electric field is maximum at, A p+n junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2µm. A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure? Electronics Circuits II Syllabus for ECE 4th Semester EC2251. Assume VBE = 0.7 V, kT/q = 25 mV and reverse saturation IS=10-13 A. Gate CSE Practice Questions; Algorithms Notes; Gate CSE Question Bank; C Programming; Gate Year Wise Solutions; Topic Wise Solutions; Gate 2021 Syllabus; ESE/IAS ECE; Menu Close. Continuous-time signals: Fourier series and Fourier transform representations, sampling theorem and applications; Discrete-time signals: discrete-time Fourier transform (DTFT), DFT, FFT, Z-transform, interpolation of discrete-time signals; LTI systems: definition and properties, causality, stability, impulse response, convolution, poles and zeros, parallel and cascade structure, frequency response, group delay, phase delay, digital filter design techniques. KTU S7 ECE Study Materials and Syllabus for EC401 Information Theory & … Bell-Electronics Devices and Circuits-Oxford 3. Assuming  10 $\tau$ << T, where $\tau$ is the time constant of the circuit, the maximum and minimum values of the waveform are respectively. As per the syllabus guidelines available on the official website, Electronics and Communication Engineering Syllabus has eight sections: Engineering Mathematics, Networks Signals and Systems, Electronic Devices, Analog Circuits, Digital Circuits, Control Systems, Communications and Electromagnetics. 2. Which of the following statements about estimates for $\style{font-family:'Times New Roman'}{g_m}$ and $\style{font-family:'Times New Roman'}{r_o}$ is correct? Which one of the following process is preferred to form the gate dielectric (SiO2) of MOSFETs ? ECN-203 Signals and Systems : DCC 4 : 17. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9, and ε0 = 8.9 × 10-12 F/m. The slope of the ID vs.VGS curve of an n-channel MOSFET in linear regime is 10−3Ω−1 at VDS=0.1 V. For the same device, neglecting channel length modulation, the slope of the ID vs. VGS curve (in AV) under saturation regime is approximately _________. MODULE 4. In the circuit shown below, the $\left(W/L\right)$ value for M2 is twice that for M1. In MOSFET fabrication, the channel length is defined during the process of, A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. Points L T P Total When a gate voltage is applied, a depletion region of width 0.5 μm is formed with a surface (channel) potential of 0.2 V. Given that ε0 = 8.854 × 10-14 F/cm and the relative permittivities of silicon and silicon dioxide are 12 and 4, respectively, the peak electric field (in V/μm) in the oxide region is _____________. Anna University EC6202 Electronic Devices and Circuits Syllabus Notes 2 marks with answer is provided below. At the operational temperature T, assume complete impurity ionization, kT/q=25mV, and intrinsic carrier concentration to be ni = 1 × 1010 cm-3. When the optical power incident on a photodiode is 10µW and the responsivity is 0.8 A/W, the photocurrent generated (in µA) is ________. What is the magnitude of the built-in potential of this device? The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6 V while keeping gate-source voltage same, the drain current increased to 1.02 mA. From ECE Department ABET Syllabus for ECE 327 (as of 2010): Course supervisor: Professor Steven B. Bibyk Catalog Description: Transistor characteristics, large and small signal parameters, transistor bias and amplifier circuits, operational amplifiers, logic circuits, … The charge of an electron is 1.6 X 10-19 C. The resistivity of the sample (in Ω-cm) is _______. Syllabus and Tut. ECE Course Syllabus. KTU S7 ECE Study Materials and Syllabus for EC401 Information Theory & Coding, EC403 Microwave & Radar Engg, EC405 Optical Communication, EC407 Computer Communication, EC409 Control Systems, EC451 Seminar & Project Preliminary, EC431 Communication Systems Lab (Optical & Microwave), EC461 Microwave Devices and Circuits, EC463 Speech and Audio Signal Processing, EC465 MEMS, EC467 … Dear Aspirants, We are providing Important Formula notes for the subject Electronic Devices and Circuits.These notes will assist the candidates to revise the important formulas from time to time and they can review them in last few hours before the examination. THEORY Sl.No. The threshold voltage $V_T$ for both transistors is 1.0V. ECE 2300 - Electrical Circuits and Electronic Devices: standard syllabus | course page; ECE 2560 - Introduction to Microcontroller-Based Systems: standard syllabus | course page; ECE 2998.01 - Undergraduate Research: standard syllabus | course page; ECE 2998.02 - Undergraduate Research: standard syllabus | course page Which of the following figures represents the expected dependence of gm on VG ? Assume donor and acceptor doping to be the same ($N_A$ and $N_D$, respectively) in the p and n sides of all the three diodes. Have a look: Verbal Ability: English grammar, sentence completion, verbal analogies, word groups, instructions, critical reasoning and verbal deduction, Numerical Ability: Numerical computation, numerical estimation, numerical reasoning and data interpretation. RRB JE Electronics Engineering Syllabus 2019 Download: Railway Recruitment Board has vacancies for recruitment of 13487 junior engineers (JE), including many posts. The transconductance of the BJT (in mA/V) is________. 22.5K. The recombination rate is directly proportional to, At T = 300 K, the hole mobility of a semiconductor μp=500 cm2/V-s and kTq=26mV The hole diffusion constant Dp in cm2/s is ________, The donor and accepter impurities in an abrupt junction silicon diode are 1 x 1016 cm-3 and 5 x 1018 cm-3, respectively. Assume that the intrinsic carrier concentration in silicon ni = 1.5 x 1010 cm-3 at 300 K, kTq = 26 mV and the permittivity of silicon ∈si =1.04×10−12F/cm. In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector dopings in atoms/cm3, respectively. MODULE 2. For the NMOSFET in the circuit shown, the threshold voltage is Vth , where Vth > 0. For a reverse bias of 7.2 V, the depletion layer width will be. A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. The electronic circuits and systems program involves the study of the processes of analysis and design of electronic circuits and systems. GATE Syllabus For ECE. CSN-221 Computer Architecture and Microprocessors : DCC 4 : 19. The course deals with the op-amp, the diode, the bipolar junction transistor, and the field-effect transistor. Introduction to Electronics Engineering: Overview, scope and objective of studying Electronics … For the MOSFET M1 shown in the figure, assume W/L = 2, VDD = 2.0 V,μnCox=100  μA/V2 and VTH = 0.5 V. The transistor M1 switches from saturation region to linear region when Vin (in Volts) is__________. MODULE 1. CHECK SYLLABUS. Assuming εs/εox= 3, the ratio of the maximum capacitance to the minimum capacitance of this MOS capacitor is _____________. A depletion type N-channel MOSFET is biased in its linear region for use as a voltage  controlled resistor. These sections are broadly created that further include several topics under each one of them Section 1: Engineering Mathematics Dimitrijev- Semiconductor Devices- Oxford 4. Note :- These notes are according to the r09 Syllabus book of JNTUH.In R13 ,8-units of R09 syllabus are combined into 5-units in r13 syllabus. At room temperature ($T$ = 300K), the magnitude of the built-in potential (in volts, correct to two decimal places) across this junction will be _________________. In the figure, D1 is a real silicon pn junction diode with a drop of 0.7 V under forward bias condition and D2 is a Zener diode with breakdown voltage of -6.8 V. The input Vin(t) is a periodic square wave of period T, whose one period is shown in the figure. fundamental concepts of their discipline of study, basic understanding of semiconductor devices, electronic circuits and communication systems. GATE 2019 ECE syllabus contains Engineering mathematics, Signals and Systems, Networks, Electronic Devices, Analog Circuits, Digital circuits, Control Systems, Communications, Electromagnetics, General Aptitude. CHECK SYLLABUS MODULE 1 MODULE 2 MODULE 3 MODULE 4 MODULE 5 MODULE 6 DOWNLOAD OFFICIAL APP. Consider the following statements for a metal oxide semiconductor field effect transistor (, Consider a silicon p-n junction with a uniform acceptor doping concentration of 10, The magnitude of the electric field (in kV/cm) in the semiconductor due to non uniform doping is _________, A long-channel NMOS transistor is biased in the linear region with, Consider avalanche breakdown in a silicon, Consider a region of silicon devoid of electrons and holes, with an ionized donor density of, The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of power 100 mW/cm, The injected excess electron concentration profile in the base region of an, 2020 © GATE-Exam.in | Complete Solution for GATE, Intrinsic semiconductor doped with pentavalent atoms to form, Electronics and Communication Engineering, Energy Bands in Intrinsic and Extrinsic Silicon, Carrier Transport: Diffusion Current, Drift Current, Mobility and Resistivity, Integrated Circuits Fabrication Process: Oxidation, Diffusion, Ion Implantation, Photolithography, Twin-Tub CMOS Process. S2: For quantum tunneling to occur, a very narrow energy barrier is required You can find GATE ECE subject wise and topic wise questions with answers The drain current of a MOSFET in saturation is given by  ID=KVGS-VT2 where K is a constant. The diode in the circuit shown has Von = 0.7 Volts but is ideal otherwise. Trade Marks belong to the respective owners. An ideal MOS capacitor has boron doping-concentration of 1015 cm-3 in the substrate. Dimitrijev- Semiconductor Devices- … If EC is the lowest energy level of the conduction band, EV is the highest energy level of the valance band and EF is the Fermi level, which one of the following represents the energy band diagram for the biased N-type semiconductor? Thomas L.Floyd, “Electronic devices” Conventional current version, Pearson prentice hall, … What is the voltage Vout in the following circuit? Consider an abrupt PN junction (at T = 300 K) shown in the figure. A silicon sample is uniformly doped with donor type impurities with a concentration of 1016/cm3. As shown, a uniformly doped Silicon (Si) bar of length L=0.1 µm with a donor concentration ND=1016 cm-3 is illuminated at x=0 such that electron and hole pairs are generated at the rate of GL=GLO1-xL,0≤x≤L, where GLO=1017 cm-3 S-1.Hole lifetime is 10-4s, electronic charge q=1.6×10-19 C, hole diffusion coefficient DP=1000 cm2/s and low level injection condition prevails. A silicon bar is doped with donor impurities ND = 2.25 x 1015 atoms / cm3. Details of Course: S. No. of ECE CREC 5 V-I CHARACTERISTICS: PROCEDURE: (i) FORWARD BIAS (For ‘Ge’ and ‘Si’ Diode): 1. Candidates seeking admission in MTech course through GATE ECE exam must be aware of the syllabus in order to start their preparation and scoring good marks. In the figure, assume that the forward voltage drops of the PN diode D1 and Schottky diode D2 are 0.7 V and 0.3 V, respectively. ECE is a combination of both Electronics Engineering & Communication Engineering which focuses on electronic equipment, circuits and networks in transmission of information. MIN-108 : Mechanical Engineering Drawing DCC/ESC : 4 16. In a p-n junction diode at equilibrium, which one of the following statements is NOT TRUE? The collector current IC for this mode of operation is, At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE? 1. Consider two BJTs biased at the same collector current with area A1 = 0.2 μm × 0.2 μm and A2 = 300 μm × 300 μm. Which of the following is correct? In a MOS capacitor with an oxide layer thickness of 10 nm, the maximum depletion layer thickness is 100 nm. We have also provided number of questions asked since 2007 and average weightage for each subject. When the drain voltage VD=1.6 V, the drain current ID was found to be 0.5 mA. At T = 300 K, the intrinsic carrier concentration of silicon ni=1.5×1010CM-3 m and kTq=26 mV. Group I lists four different semiconductor devices. The figure below shows the doping distribution in a p-type semiconductor in log scale, The hole concentration at $t$=0 and the hole concentration at $t$=0.3 μs, respectively, are. ECE 333: Electronics I Spring 2020 Catalog: Introduction to electronic devices and the basic circuits. 4. Singh & Singh- Electronics Devices and Integrated Circuits –PHI 5. Main aim is to strengthen the skill and knowledge among students inorder to develop them as a good Electronic Engineer. For forward bias, the RPS +ve is connected to the anode of the diode and RPS –ve is EC6202 Notes Syllabus all 5 units notes are uploaded here. ECE 333: Electronics I Spring 2020 Catalog: Introduction to electronic devices and the basic circuits. The value of the collector bias current (in mA) required to match the input impedance of the amplifier to the impedance of the antenna is________. ECN-291 Electronic Network Theory DCC 4 20. Circuit Theory and Devices (CTD): This course intends to develop problem solving skills and understanding of circuit theory through the application of techniques and principles of electrical circuit analysis to common circuit problems. Which of the following figures represents the electric field profile near the pn junction? Assume threshold voltage VTH= -0.5 V, VGS= 2.0 V, VDS= 5 V, W/L = 100, COX= 10-8 F/ Cm2 and μn= 800 Cm2 /V-s. Assume kT/q = 25 mV. Electronic Devices and Circuits – Anil k maini , varsha agarwal , 2009 WIPL; Electronic Devices and Circuits – s salivahana n suresh kumar, a vallavaraj 2008 TMH. Basic control system components; Feedback principle; Transfer function; Block diagram representation; Signal flow graph; Transient and steady-state analysis of LTI systems; Frequency response; RouthHurwitz and Nyquist stability criteria; Bode and root-locus plots; Lag, lead and lag-lead compensation; State variable model and solution of state equation of LTI systems. Module 6. Embedded Systems Architecture, Programming and Design book by Rajkamal 2. The voltage standing wave ratio (VSWR) and magnitude of reflection coefficient are respectively, The i-v characteristics of the diode in the circuit given below are, The source of a silicon (ni = 1010 per cm3) n-channel MOS transistor has an area of 1 sq μm and a depth of 1 μm. Embedded and Real-Time Systems by L.Gopinath S.Kanimozhi 5. Copyright © 2020 Info edge India Ltd. All rights reserved. The energy band diagram and the electron density profile n(x) in a semiconductor are shown in figures. EC8353 EDC Syllabus. A solar cell of area 1.0 cm2 , operating at 1.0 sun intensity, has a short circuit current of 20 mA, and an open circuit voltage of 0.65 V. Assuming room temperature operation and thermal equivalent voltage of 26 mV, the open circuit voltage (in volts, correct to two decimal places) at 0.2 sun intensity is _______. Knowing GATE syllabus for ECE will help candidates in making a good preparation strategy which will help them achieve a desired goals. ECE consists of some other elements like Electrical Engineering, Computer Engineering and Control Systems etc. Module 5. Revised & Proposed Syllabus of B.Tech in ECE (To be followed from the academic session, July 2011, i.e. Biasing, small-signal and large signal analysis and the principles employed in the design of electronic circuits are included in the course. JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD II Year B.Tech. Bell-Electronics Devices and Circuits-Oxford 3. Compared to a p-n junction with NA=ND=1014/cm3, which one of the following statements is TRUE for a p-n junction with NA=ND=1020/cm3? Consider the following two statements about the internal conditions in an n-channel MOSFET operating in the active region Field Theory Contact Hours/Week Cr. A BJT is biased in forward active mode. Complex Analysis: Analytic functions, Cauchy's integral theorem, Cauchy's integral formula; Taylor's and Laurent's series, residue theorem. Module 4. Assume that nx=1015eqaxkTcm-3 , with α = 0.1 V/cm and x expressed in cm. For Course Code, Subject Names, Theory Lectures, Tutorial, Practical/Drawing, Credits, and other information do visit full semester … Consider the following assertions A MOSFET in saturation has a drain current of 1 mA for VDS =0.5 V. If the channel length modulation coefficient is 0.05 V-1, the output resistance (in kΩ) of the MOSFET is_________. Calculus: Mean value theorems, theorems of integral calculus, evaluation of definite and improper integrals, partial derivatives, maxima and minima, multiple integrals, line, surface and volume integrals, Taylor series. Let $\style{font-family:'Times New Roman'}{g_{m1},\;g_{m2}}$ be the transconductances and $\style{font-family:'Times New Roman'}{r_{o1},\;r_{o2}}$ be the output resistances of transistors M1 and M2, respectively. GATE 2021 syllabus for Electronics and Communication Engineering (ECE) branch will be released by the official exam conducting authority in the month of September 2021. Here we are providing Embedded Sytems Books for ECE Students. LAB MANUAL ELECTRONIC DEVICES & CIRCUITS LAB Dept. There are two photolithography systems: one with light source of wavelength $\lambda_1=156$ nm (System 1) and another with light source of wavelength $\lambda_2=325$ nm (System 2). Which one of the following statements is NOT TRUE? Analog Electronic Circuits Lab 0 0 0 0 3 3 3 3 2 2 Total of Practical 14 9 Total of Semester 35 29 ECE SECOND YEAR: FOURTH SEMESTER A. In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6 V. The output voltage Vo (in volts) is _______. ELECTRONIC DEVICES AND CIRCUITS III Semester: ECE Course Code Category Hours / Week Credits Maximum Marks AEC001 Foundation L T P C CIA SEE Total 3 1 - 4 30 70 100 Contact Classes: 45 Tutorial Classes: 15 Practical Classes: Nil Total Classes: 60 OBJECTIVES: The course should enable the … K=12μCoxWL=0.1 mA/V2 The value of ID (in mA) is _______ . Linear Algebra: Vector space, basis, linear dependence and independence, matrix algebra, eigenvalues and Eigen vectors, rank, solution of linear equations – existence and uniqueness. Electronic devices and circuits Previous year question paper with solutions for Electronic devices and circuits from 2005 to 2018. Given the intrinsic carrier concentration of silicon at T = 300 K is ni = 1.5 x 1010 cm-3. Network solution methods: Nodal and mesh analysis; Network theorems: superposition, Thevenin and Norton’s, maximum power transfer; Wye‐Delta transformation; Steady state sinusoidal analysis using phasors; Time domain analysis of simple linear circuits; Solution of network equations using Laplace transform; Frequency domain analysis of RLC circuits; Linear 2‐port network parameters: driving point and transfer functions; State equations for networks. A p-n step junction diode with a contact potential of 0.65 V has a depletion width of 1μm at equilibrium. A junction is made between $p^-$ Si with doping density $N_{A1}=10^{15}$ cm-3 and $p$ Si with doping density $N_{A2}=10^{17}$ cm-3 . The details regarding GATE 2021 exam conducting body is not out yet. We have also provided number of questions asked since 2007 and average weightage for each subject. GATE Syllabus For ECE 2021: GATE 2021 syllabus for Electronics and Communication Engineering (ECE) branch is released by the officials of IIT Bombay.GATE ECE aspirants must be aware of the GATE syllabus for ECE in order to start their preparation. Gate ECE Syllabus; GATE CSE . Circuit Theory and Devices (CTD): This course intends to develop problem solving skills and understanding of circuit theory through the application of techniques and principles of electrical circuit analysis to common circuit problems. EDC is one of the most important subject and a vast syllabus in Electronics and Communication Engineering. EC8353 Notes all 5 units notes are uploaded here. For Course Code, Subject Names, Theory Lectures, Tutorial, Practical/Drawing, Credits, and other information do visit full semester … Devise an effective preparation strategy for GATE 2021 with Electronics & Communication Engineering (EC) Syllabus. Probability and Statistics: Mean, median, mode and standard deviation; combinatorial probability, probability distribution functions - binomial, Poisson, exponential and normal; Joint and conditional probability; Correlation and regression analysis. Note: This syllabus is same for BME, CSE, ECE, EEE, EIE, Electronics and Computer Engineering, ETM, ICE, IT/CST, Mechanical Engineering (Mechatronics). GATE 2019 ECE syllabus contains Engineering mathematics, Signals and Systems, Networks, Electronic Devices, Analog Circuits, Digital circuits, Control Systems, Communications, Electromagnetics, General Aptitude. Assuming that the reverse bias voltage is » built-in potentials of the diodes, the ratio C 2/C1 of their reverse bias capacitances for the same applied reverse bias, is_________. Red (R), Green (G) and Blue (B) Light Emitting Diodes (LEDs) were fabricated using p-n junctions of three different inorganic semiconductors having different band-gaps. Which of the following is correct?
2020 electronic devices and circuits syllabus for ece